Datasheet Details
| Part number | 2SD581 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 201.70 KB |
| Description | NPN Transistor |
| Datasheet |
 2SD581-INCHANGE.pdf
|
| Part number | 2SD581 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 201.70 KB |
| Description | NPN Transistor |
| Datasheet |
2SD581-INCHANGE.pdf
|
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max.)@ IC= 5A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for 40~60W audio amplifier power output applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector
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