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2SD581

NPN Transistor

2SD581 General Description


*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.)
*Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max.)@ IC= 5A
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designed for 40~60W audio amplifier power output applic.

2SD581 Datasheet (201.70 KB)

Preview of 2SD581 PDF

Datasheet Details

Part number:

2SD581

Manufacturer:

INCHANGE

File Size:

201.70 KB

Description:

Npn transistor.

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