2SD581 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor 2SD581 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min. Collector-Emitter Saturation Voltage- : VCE(sat)= 1. Minimu.

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Datasheet Specifications

Part number: 2SD581
Manufacturer: INCHANGE
File Size: 201.70 KB
Datasheet: 2SD581-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for 40~60W audio amplifier power output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector

2SD581 Distributors

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2SD581 NPN Transistor INCHANGE

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