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2SD582

NPN Transistor

2SD582 General Description


*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min.)
*Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max.)@ IC= 7A
*Complement to Type 2SB612
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designed for 80~100W aud.

2SD582 Datasheet (203.04 KB)

Preview of 2SD582 PDF

Datasheet Details

Part number:

2SD582

Manufacturer:

INCHANGE

File Size:

203.04 KB

Description:

Npn transistor.

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