2SD582 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min. Collector-Emitter Saturation Voltage- : VCE(sat)= 1. Comple.

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Datasheet Specifications

Part number: 2SD582
Manufacturer: INCHANGE
File Size: 203.04 KB
Datasheet: 2SD582-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for 80~100W audio amplifier power output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 12 A ICM Collect

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2SD582 NPN Transistor INCHANGE

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