AOD4N60 Datasheet - INCHANGE

AOD4N60, TO-252 N-Channel MOSFET

Isc N-Channel MOSFET Transistor AOD4N60 *

Features

* With To-252(DPAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 4 2.6 14 PD Total Dissipation @TC=25℃ 104 Tch Max.
Operating J

AOD4N60-INCHANGE.pdf