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BDY55 NPN Transistor

BDY55 Description

isc Silicon NPN Power Transistor BDY55 .
Excellent Safe Operating Area. DC Current Gain- : hFE=20-70@IC = 4A. Collector-Emitter Saturation Voltage- : VCE(sat)= 1.

BDY55 Applications

* Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A IB Base

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Datasheet Details

Part number
BDY55
Manufacturer
INCHANGE
File Size
203.30 KB
Datasheet
BDY55-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE BDY55-like datasheet