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BDY60 NPN Transistor

BDY60 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min). Low Collector-Emitter Saturation Voltage. Excellent Safe Operating Area.

BDY60 Applications

* Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A

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Datasheet Details

Part number
BDY60
Manufacturer
INCHANGE
File Size
197.08 KB
Datasheet
BDY60-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE BDY60-like datasheet