FCD260N65S3 N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor .
Designed for use in switch mode power supplies and general purpose applications.

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Datasheet Specifications

Part number: FCD260N65S3
Manufacturer: INCHANGE
File Size: 260.81 KB
Datasheet: FCD260N65S3-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* Drain Current
* ID= 12A@ TC=25℃
* Drain Source Voltage- : VDSS= 650V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 260mΩ(Max)
* 100% avalanche tested

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 650 V ±30 V ID Drain Current-Continuous 12 A IDM Drain Current-Single Pluse 30 A PD Total Dissipation @TC=25℃ 90 W TJ Max. Operating Junction Temperature

FCD260N65S3 Distributors

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FCD260N65S3 N-Channel MOSFET INCHANGE

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