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FDP3672 N-Channel MOSFET

FDP3672 Description

isc N-Channel MOSFET Transistor *.

FDP3672 Features

* With TO-220 packaging
* Drain Source Voltage- : VDSS ≥ 105V
* Static drain-source on-resistance: RDS(on) ≤ 33mΩ@VGS=10V
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

FDP3672 Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 105 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 41 A PD Total Dissipation 135 W Tj Operating Junction Temperature

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Datasheet Details

Part number
FDP3672
Manufacturer
INCHANGE
File Size
278.55 KB
Datasheet
FDP3672-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE FDP3672-like datasheet