FDP3672 Datasheet, Mosfet, INCHANGE

FDP3672 Features

• Mosfet
• With TO-220 packaging
• Drain Source Voltage- : VDSS ≥ 105V
• Static drain-source on-resistance: RDS(on) ≤ 33mΩ@VGS=10V
• 100% avalanche tested
• Mi

PDF File Details

Part number:

FDP3672

Manufacturer:

INCHANGE

File Size:

278.55kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

FDP3672 Application

• Applications
• Power supply
• Switching applications
• ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS

TAGS

FDP3672

INCHANGE

📁 Related Datasheet

FDP3672 - N-Channel MOSFET (Fairchild Semiconductor)
FDP3672 — N-Channel PowerTrench® MOSFET November 2013 FDP3672 N-Channel PowerTrench® MOSFET 105 V, 41 A, 33 mΩ Features • RDS(on) = 25 mΩ ( Typ.) @.

FDP3632 - N-Channel MOSFET (Fairchild Semiconductor)
FDB3632 / FDP3632 / FDI3632 April 2003 FDB3632 / FDP3632 / FDI3632 N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ Features • r DS(ON) = 7.5mΩ (Typ.), .

FDP3632 - N-Channel MOSFET (ON Semiconductor)
MOSFET – Power, N-Channel, POWERTRENCH) 100 V, 80 A, 9 mW FDH3632, FDP3632, FDB3632 Features • RDS(ON) = 7.5 mW (Typ.), VGS = 10 V, ID = 80 A • Qg (t.

FDP3632 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥100V ·Static drain-source on-resistance: RDS(on) ≤ 9m.

FDP3651U - N-Channel MOSFET (Fairchild Semiconductor)
FDP3651U — N-Channel PowerTrench® MOSFET October 2013 FDP3651U N-Channel PowerTrench® MOSFET 100 V, 80 A, 18 mΩ Features • RDS(on) = 15 mΩ ( Typ.) @.

FDP3651U - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 100V ·Static drain-source on-resistance: RDS(on) ≤ 1.

FDP3652 - N-Channel MOSFET (Fairchild Semiconductor)
FDP3652 / FDB3652 — N-Channel PowerTrench® MOSFET October 2013 FDP3652 / FDB3652 N-Channel PowerTrench® MOSFET 100 V, 61 A, 16 mΩ Features Applica.

FDP3682 - N-Channel MOSFET (Fairchild Semiconductor)
FDB3682 / FDP3682 N-Channel PowerTrench ® MOSFET FDB3682 / FDP3682 N-Channel PowerTrench® MOSFET 100 V, 32 A, 36 mΩ March 2013 Features • RDS(on) =.

FDP3682 - N-Channel MOSFET (ON Semiconductor)
MOSFET – N-Channel, POWERTRENCH) 100 V, 32 A, 36 mW FDB3682, FDP3682 Features • RDS(on) = 32 mW (Typ.) @ VGS = 10 V, ID = 32 A • QG(tot) = 18.5 nC (T.

FDP3682 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 100V ·Static drain-source on-resistance: RDS(on) ≤ 3.