IPD65R1K0CE - N-Channel MOSFET
IPD65R1K0CE Features
* Static drain-source on-resistance: RDS(on)≤1Ω
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Fast switching
* Very high commutation ruggedness
* ABSOLUTE MAXIMUM RATINGS(Ta=25
