IPI086N10N3 N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPI086N10N3 *.

📥 Download Datasheet

IPI086N10N3 Datasheet Preview — Preview of IPI086N10N3 PDF

Datasheet Specifications

Part number: IPI086N10N3
Manufacturer: INCHANGE
File Size: 256.65 KB
Datasheet: IPI086N10N3-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* Static drain-source on-resistance: RDS(on) ≤8.2mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 80 A IDM Drain Current-Single Pulsed 320 A PD Total Dissipation @TC=25℃ 125 W Tj Max. Operating Junction Temperature

IPI086N10N3 Distributors

📁 Related Datasheet

IPI086N10N3G IPI082N10N3G IPI084N06L3G IPI08CN10NG IPI08CNE8NG IPI020N06N

📌 All Tags

IPI086N10N3 N-Channel MOSFET INCHANGE

INCHANGE IPI086N10N3-like datasheet