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IPI086N10N3

N-Channel MOSFET

IPI086N10N3 Features

* Static drain-source on-resistance: RDS(on) ≤8.2mΩ

* Enhancement mode

* Fast Switching Speed

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* DESCRITION

* reliable device for use in a wide variety of applications

IPI086N10N3 Datasheet (256.65 KB)

Preview of IPI086N10N3 PDF

Datasheet Details

Part number:

IPI086N10N3

Manufacturer:

INCHANGE

File Size:

256.65 KB

Description:

N-channel mosfet.

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IPI086N10N3 N-Channel MOSFET INCHANGE

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