IPI65R190E6 Datasheet - INCHANGE

Datasheet Details

Part number:

IPI65R190E6

Manufacturer:

INCHANGE

File Size:

282.19 KB

Description:

N-Channel MOSFET

isc N-Channel MOSFET Transistor *FEATURES *Static drain-source on-resistance: RDS(on) ≤0.19Ω *Enhancement mode *Fast Switching Speed *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRIPTION *Provide all

IPI65R190E6-INCHANGE.pdf

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IPI65R190E6, N-Channel MOSFET

*Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 20.2 A IDM Drain Current-Single Pul

IPI65R190E6 Distributor

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IPI65R190E6 N-Channel MOSFET INCHANGE

INCHANGE IPI65R190E6-like datasheet