IPP083N10N5 N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor IPP083N10N5，IIPP083N10N5 *.

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Datasheet Specifications

Part number: IPP083N10N5
Manufacturer: INCHANGE
File Size: 241.61 KB
Datasheet: IPP083N10N5-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* Static drain-source on-resistance: RDS(on) ≤8.3mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 73 IDM Drain Current-Single Pulsed 292 PD Total Dissipation @TC=25℃ 100 Tj Max. Operating Junction Temperature 175 Tstg Storage T

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IPP083N10N5 N-Channel MOSFET INCHANGE

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