IRFP4868 Datasheet - INCHANGE

IRFP4868, N-Channel MOSFET

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP4868，IIRFP4868 *.

Features

* Static drain-source on-resistance: RDS(on)≤32mΩ
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* High Speed Power Switching
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER V

Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

IRFP4868-INCHANGE.pdf