Part number:
IRFR214
Manufacturer:
INCHANGE
File Size:
282.65 KB
Description:
N-channel mosfet.
* Low drain-source on-resistance: RDS(ON) ≤2.0Ω @VGS=10V
* Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Switching Voltage Regulators
* ABS
IRFR214
INCHANGE
282.65 KB
N-channel mosfet.
📁 Related Datasheet
IRFR210 Power MOSFET (International Rectifier)
IRFR210 Power MOSFET (Vishay Siliconix)
IRFR210A Power MOSFET (Samsung)
IRFR210B 200V N-Channel MOSFET (Fairchild Semiconductor)
IRFR210PBF HEXFET POWER MOSFET (International Rectifier)
IRFR214 Power MOSFET (Fairchild Semiconductor)
IRFR214 N-Channel Power MOSFETs (Intersil Corporation)
IRFR214 Power MOSFET (International Rectifier)
IRFR214 Power MOSFET (Vishay Siliconix)
IRFR214A Power MOSFET (Samsung)
