IRFR310 Datasheet, Mosfet, INCHANGE

IRFR310 Features

• Mosfet
• Low drain-source on-resistance: RDS(ON) ≤3.6Ω @VGS=10V
• Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)
• 100% avalanche tested
• Minimum Lot-

PDF File Details

Part number:

IRFR310

Manufacturer:

INCHANGE

File Size:

282.97kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

IRFR310 Application

• Applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipmen

TAGS

IRFR310

INCHANGE

📁 Related Datasheet

IRFR310 - Power MOSFET (Fairchild Semiconductor)
$GYDQFHG 3RZHU 026)(7 IRFR310 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge.

IRFR310 - Power MOSFET (International Rectifier)
.

IRFR310 - Power MOSFET (Vishay Siliconix)
.vishay. IRFR310, IRFU310, SiHFR310, SiHFU310 Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D D G GS GD S S N-Channel MOSF.

IRFR310A - Power MOSFET (Fairchild Semiconductor)
.. $GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved .

IRFR310B - 400V N-Channel MOSFET (Fairchild Semiconductor)
IRFR310B / IRFU310B November 2001 IRFR310B / IRFU310B 400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect .

IRFR320 - Power MOSFET (International Rectifier)
.

IRFR320 - N-Channel Power MOSFETs (Intersil Corporation)
IRFR320, IRFU320 Data Sheet July 1999 File Number 2412.3 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon .

IRFR320 - Power MOSFET (Vishay Siliconix)
.vishay. IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D D G GS GD S S N-Channel MOSF.

IRFR320 - N-Channel Power MOSFETs (Fairchild Semiconductor)
IRFR320, IRFU320 Data Sheet July 1999 File Number 2412.3 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon .

IRFR320 - N-Channel MOSFET (INCHANGE)
iscN-Channel MOSFET Transistor IRFR320 ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤1.8Ω @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS =.