IRLR3103
INCHANGE
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N-channel mosfet.
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IRLR3103 - Power MOSFET
(International Rectifier)
l Logic-Level Gate Drive
l Ultra Low On-Resistance
l Surface Mount (IRLR3103)
l Straight Lead (IRLU3103)
l Advanced Process Technology
G
l Fast .
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Logic-Level Gate Drive l Ultra Low On-Resistance l Surface Mount (IRLR3103) l Straight Lead (IRLU3103) l Advanced Process T.
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Features l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low .
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isc N-Channel MOSFET Transistor
IRLR3105, IIRLR3105
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤37mΩ ·Enhancement mode: ·100% avalanche te.
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PD - 95553A
AUTOMOTIVE MOSFET
Features
l l l l l l l
HEXFET Power MOSFET
Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance .
IRLR3110Z - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IRLR3110Z, IIRLR3110Z
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤14mΩ ·Enhancement mode: ·100% avalanche .
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(International Rectifier)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to T.
IRLR3110ZPBF - N-Channel MOSFET
(VBsemi)
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.VBsemi.
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PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0075 at VGS = 10 V 100
0.0095 at VGS.
IRLR3114Z - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IRLR3114Z,IIRLR3114Z
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤4.9mΩ ·Enhancement mode: ·100% avalanche .
IRLR3114ZPbF - Power MOSFET
(International Rectifier)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to T.