IXTA180N085T N-Channel MOSFET

INCHANGE

IXTA180N085T Description

isc N-Channel MOSFET Transistor IXTA180N085T *.

IXTA180N085T Features

* Static drain-source on-resistance: RDS(on) ≤ 5.5mΩ@VGS=10V
* Fully characterized avalanche voltage and current
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IXTA180N085T Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 85 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 180 IDM Drain Current-Single Pulsed 480 PD Total Dissipation @TC=25℃ 430 Tj Operating Junction Temperature -55~175 Tstg Storage Te

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Datasheet Details

Part number: IXTA180N085T
Manufacturer: INCHANGE
File Size: 250.73 KB
Datasheet: IXTA180N085T-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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