IXTA182N055T7 Datasheet - IXYS Corporation

IXTA182N055T7, Power MOSFET

Preliminary Technical Information TrenchMVTM IXTA182N055T7 Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 55 18.

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IXTA182N055T7-IXYSCorporation.pdf

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Datasheet Details

Part number:

IXTA182N055T7

Manufacturer:

IXYS Corporation

File Size:

194.46 KB

Description:

Power MOSFET

Features

* Ultra-low On Resistance Unclamped Inductive Switching (UIS) g rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Symbol Test Conditions (TJ = 25° C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA IGSS VGS = ±

Applications

* Automotive - Motor Drives - High Side Switch - 12V Battery - ABS Systems DC/DC Converters and Off-line UPS Primary- Side Switch High Current Switching Applications © 2006 IXYS CORPORATION All rights reserved DS99681 (11/06) IXTA182N055T7 Symbol Test Conditions (TJ = 25° C unless otherwise spec

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IXTA182N055T7 Power MOSFET IXYS Corporation

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