* Ultra-low On Resistance Unclamped Inductive Switching (UIS) g rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Symbol Test Conditions (TJ = 25° C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA IGSS VGS = ±
IXTA182N055T7 Datasheet (194.46 KB)
IXTA182N055T7
IXYS Corporation
194.46 KB
Power mosfet.
Preliminary Technical Information
TrenchMVTM
IXTA182N055T7
Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
55 18.
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