IXTA180N085T Datasheet, Mosfet, IXYS Corporation

IXTA180N085T Features

• Mosfet Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Advantages Easy to mount Space sav

PDF File Details

Part number:

IXTA180N085T

Manufacturer:

IXYS Corporation

File Size:

204.77kb

Download:

📄 Datasheet

Description:

Power mosfet.

IXTA180N085T Application

• Applications Automotive - Motor Drives - High Side Switch - 12V Battery - ABS Systems DC/DC Converters and Off-line UPS Primary- Side Switch High Cu

TAGS

IXTA180N085T

IXYS Corporation

📁 Related Datasheet

IXTA180N085T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTA180N085T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 5.5mΩ@VGS=10V ·Fully characterized avalanche vo.

IXTA180N085T7 - Power MOSFET (IXYS Corporation)
TrenchMVTM Power MOSFET IXTA180N085T7 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier VDSS = ID25 = RDS(on) ≤ 85V 180A 5.5mΩ .

IXTA180N055T - (IXTP180N055T / IXTA180N055T / IXTQ180N055T) Trench Gate Power MOSFET (IXYS Corporation)
Advance Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode IXTQ 180N055T IXTA 180N055T IXTP 180N055T VDSS ID25 RDS(on) = 55.

IXTA180N10T - Power MOSFET (IXYS Corporation)
TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA180N10T IXTP180N10T VDSS = 100V ID25 = 180A RDS(on) ≤ 6.4mΩ TO-263 (IXTA) Sy.

IXTA180N10T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.4mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.

IXTA180N10T7 - Power MOSFET (IXYS Corporation)
PreliminaryTechnical Information TrenchMVTM IXTA180N10T7 Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 100 180.

IXTA182N055T - Power MOSFET (IXYS Corporation)
Preliminary Technical Information TrenchMVTM Power MOSFET IXTA182N055T IXTP182N055T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(o.

IXTA182N055T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 5.0mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.

IXTA182N055T7 - Power MOSFET (IXYS Corporation)
Preliminary Technical Information TrenchMVTM IXTA182N055T7 Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 55 18.

IXTA18P10T - Power MOSFETs (IXYS)
TrenchPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTY18P10T IXTA18P10T IXTP18P10T Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ.