* Ultra-low On Resistance °C Unclamped Inductive Switching (UIS) °C rated °C Low package inductance °C °C - easy to drive and to protect 175 ° C Operating Temperature g Advantages Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25° C unless otherwise specified) BVDSS
IXTA180N10T7 Datasheet (188.40 KB)
IXTA180N10T7
IXYS Corporation
188.40 KB
Power mosfet.
PreliminaryTechnical Information
TrenchMVTM
IXTA180N10T7
Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
100 180.
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