Datasheet Specifications
- Part number
- IXTA180N10T7
- Manufacturer
- IXYS Corporation
- File Size
- 188.40 KB
- Datasheet
- IXTA180N10T7-IXYSCorporation.pdf
- Description
- Power MOSFET
Description
PreliminaryTechnical Information TrenchMVTM IXTA180N10T7 Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 100 180.
Features
* Ultra-low On Resistance °C Unclamped Inductive Switching (UIS) °C rated °C Low package inductance °C °C - easy to drive and to protect 175 ° C Operating Temperature g Advantages Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25° C unless otherwise specified) BVDSSApplications
* Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems Distributed Power Architechtures and VRMs Electronic Valve Train Systems High Current Switching Applications High Voltage Synchronous Recifier © 2006 IXYS CORPORATION AllIXTA180N10T7 Distributors
📁 Related Datasheet
📌 All Tags