Part number:
IXTA180N10T7
Manufacturer:
IXYS Corporation
File Size:
188.40 KB
Description:
Power mosfet.
IXTA180N10T7-IXYSCorporation.pdf
Datasheet Details
Part number:
IXTA180N10T7
Manufacturer:
IXYS Corporation
File Size:
188.40 KB
Description:
Power mosfet.
IXTA180N10T7, Power MOSFET
PreliminaryTechnical Information TrenchMVTM IXTA180N10T7 Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 100 180 6.4 V A mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Package Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG =3.3 Ω TC = 25° C 1.6 m
IXTA180N10T7 Features
* Ultra-low On Resistance °C Unclamped Inductive Switching (UIS) °C rated °C Low package inductance °C °C - easy to drive and to protect 175 ° C Operating Temperature g Advantages Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25° C unless otherwise specified) BVDSS
📁 Related Datasheet
📌 All Tags