IXTA180N10T7 Datasheet - IXYS Corporation

IXTA180N10T7, Power MOSFET

PreliminaryTechnical Information TrenchMVTM IXTA180N10T7 Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 100 180.

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IXTA180N10T7-IXYSCorporation.pdf

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Datasheet Details

Part number:

IXTA180N10T7

Manufacturer:

IXYS Corporation

File Size:

188.40 KB

Description:

Power MOSFET

Features

* Ultra-low On Resistance °C Unclamped Inductive Switching (UIS) °C rated °C Low package inductance °C °C - easy to drive and to protect 175 ° C Operating Temperature g Advantages Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25° C unless otherwise specified) BVDSS

Applications

* Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems Distributed Power Architechtures and VRMs Electronic Valve Train Systems High Current Switching Applications High Voltage Synchronous Recifier © 2006 IXYS CORPORATION All

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IXTA180N10T7 Power MOSFET IXYS Corporation

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