IXTA180N085T7 Datasheet, Mosfet, IXYS Corporation

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IXTA180N085T7

Manufacturer:

IXYS Corporation

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📄 Datasheet

Description:

Power mosfet.

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IXTA180N085T7

IXYS Corporation

📁 Related Datasheet

IXTA180N085T - Power MOSFET (IXYS Corporation)
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IXTA180N085T - N-Channel MOSFET (INCHANGE)
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IXTA180N055T - (IXTP180N055T / IXTA180N055T / IXTQ180N055T) Trench Gate Power MOSFET (IXYS Corporation)
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TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA180N10T IXTP180N10T VDSS = 100V ID25 = 180A RDS(on) ≤ 6.4mΩ TO-263 (IXTA) Sy.

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.4mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.

IXTA180N10T7 - Power MOSFET (IXYS Corporation)
PreliminaryTechnical Information TrenchMVTM IXTA180N10T7 Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 100 180.

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Preliminary Technical Information TrenchMVTM Power MOSFET IXTA182N055T IXTP182N055T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(o.

IXTA182N055T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 5.0mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.

IXTA182N055T7 - Power MOSFET (IXYS Corporation)
Preliminary Technical Information TrenchMVTM IXTA182N055T7 Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 55 18.

IXTA18P10T - Power MOSFETs (IXYS)
TrenchPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTY18P10T IXTA18P10T IXTP18P10T Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ.