IXTA18P10T
IXYS
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Power mosfets.
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IXTA180N055T - (IXTP180N055T / IXTA180N055T / IXTQ180N055T) Trench Gate Power MOSFET
(IXYS Corporation)
Advance Technical Information
Trench Gate Power MOSFET
N-Channel Enhancement Mode
IXTQ 180N055T IXTA 180N055T IXTP 180N055T
VDSS ID25
RDS(on)
= 55.
IXTA180N085T - Power MOSFET
(IXYS Corporation)
Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTA180N085T IXTP180N085T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(o.
IXTA180N085T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTA180N085T
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 5.5mΩ@VGS=10V ·Fully characterized avalanche vo.
IXTA180N085T7 - Power MOSFET
(IXYS Corporation)
TrenchMVTM Power MOSFET
IXTA180N085T7
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
VDSS = ID25 =
RDS(on) ≤
85V 180A 5.5mΩ
.
IXTA180N10T - Power MOSFET
(IXYS Corporation)
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA180N10T IXTP180N10T
VDSS = 100V ID25 = 180A RDS(on) ≤ 6.4mΩ
TO-263 (IXTA)
Sy.
IXTA180N10T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 6.4mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.
IXTA180N10T7 - Power MOSFET
(IXYS Corporation)
PreliminaryTechnical Information
TrenchMVTM
IXTA180N10T7
Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
100 180.
IXTA182N055T - Power MOSFET
(IXYS Corporation)
Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTA182N055T IXTP182N055T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(o.
IXTA182N055T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 5.0mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.
IXTA182N055T7 - Power MOSFET
(IXYS Corporation)
Preliminary Technical Information
TrenchMVTM
IXTA182N055T7
Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
55 18.