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IXTA180N10T

N-Channel MOSFET

IXTA180N10T Features

* Static drain-source on-resistance: RDS(on) ≤ 6.4mΩ@VGS=10V

* Fully characterized avalanche voltage and current

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* APPLICATION

* DC/DC Converters

* High Speed Power Swit

IXTA180N10T Datasheet (251.41 KB)

Preview of IXTA180N10T PDF

Datasheet Details

Part number:

IXTA180N10T

Manufacturer:

INCHANGE

File Size:

251.41 KB

Description:

N-channel mosfet.

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IXTA180N10T N-Channel MOSFET INCHANGE

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