IXTA180N10T N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor *.

📥 Download Datasheet

IXTA180N10T Datasheet Preview — Preview of IXTA180N10T PDF

Datasheet Specifications

Part number: IXTA180N10T
Manufacturer: INCHANGE
File Size: 251.41 KB
Datasheet: IXTA180N10T-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* Static drain-source on-resistance: RDS(on) ≤ 6.4mΩ@VGS=10V
* Fully characterized avalanche voltage and current
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 180 IDM Drain Current-Single Pulsed 450 PD Total Dissipation @TC=25℃ 480 Tj Operating Junction Temperature -55~175 Tstg Storage T

IXTA180N10T Distributors

📁 Related Datasheet

IXTA180N10T7 IXTA180N055T IXTA180N085T IXTA180N085T7 IXTA182N055T IXTA182N055T7

📌 All Tags

IXTA180N10T N-Channel MOSFET INCHANGE

INCHANGE IXTA180N10T-like datasheet