IXTA1N100P TO-263 N-Channel MOSFET

INCHANGE

Description

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXTA1N100P *.

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Datasheet Specifications

Part number: IXTA1N100P
Manufacturer: INCHANGE
File Size: 198.56 KB
Datasheet: IXTA1N100P-INCHANGE.pdf
Description: TO-263 N-Channel MOSFET

Features

* With To-263(D2PAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 1000 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous 1.0 IDM Drain Current-Single Pulsed 1.8 PD Total Dissipation 50 Tj Max. Operating Junction Temperature

IXTA1N100P Distributors

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IXTA1N100P TO-263 N-Channel MOSFET INCHANGE

INCHANGE IXTA1N100P-like datasheet