IXTA1N100P Datasheet - INCHANGE

IXTA1N100P, TO-263 N-Channel MOSFET

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXTA1N100P *

Features

* With To-263(D2PAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 1000 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous 1.0 IDM Drain Current-Single Pulsed 1.8 PD Total Dissipation 50 Tj Max.
Operating Junction Temperature

IXTA1N100P-INCHANGE.pdf