* Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s International standard packages High voltage, Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Fast switching times Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise spe
IXTA1N100 Datasheet (46.64 KB)
IXTA1N100
IXYS Corporation
46.64 KB
High voltage mosfet.
Advanced Technical Information High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTA 1N100 IXTP 1N100 VDSS ID25 RDS(on) = 100.
📁 Related Datasheet
IXTA1N100 N-Channel MOSFET (INCHANGE)
IXTA1N100P Power MOSFET (IXYS)
IXTA1N100P TO-263 N-Channel MOSFET (INCHANGE)
IXTA1N170DHV N-Channel MOSFET (IXYS)
IXTA1N200P3HV High Voltage Power MOSFET (IXYS)
IXTA1N80 High Voltage MOSFET (IXYS)
IXTA1N80P Power MOSFET (IXYS)
IXTA100N04T2 Power MOSFET (IXYS)
IXTA100N04T2 N-Channel MOSFET (INCHANGE)
IXTA100N15X4 Power MOSFET (IXYS)
