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IXTA1N100 Datasheet - IXYS Corporation

IXTA1N100 High Voltage MOSFET

Advanced Technical Information High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTA 1N100 IXTP 1N100 VDSS ID25 RDS(on) = 1000 V = 1.5 A = 11 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM Maximum Ratings 1000 1000 ±20 ±30 1.5 6 1.5 V V V V A A A mJ mJ V/ns W °C °C °C TO-220AB (IXTP) GD D (TAB) S TO.

IXTA1N100 Features

* Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Ÿ International standard packages Ÿ High voltage, Low RDS (on) HDMOSTM process Ÿ Rugged polysilicon gate cell structure Ÿ Fast switching times Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise spe

IXTA1N100 Datasheet (46.64 KB)

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Datasheet Details

Part number:

IXTA1N100

Manufacturer:

IXYS Corporation

File Size:

46.64 KB

Description:

High voltage mosfet.

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IXTA1N100 High Voltage MOSFET IXYS Corporation

IXTA1N100 Distributor