Datasheet Details
Part number:
IXTA1N100P, IXTY1N100P
Manufacturer:
IXYS
File Size:
296.83 KB
Description:
Power mosfet.
Note:
This datasheet PDF includes multiple part numbers: IXTA1N100P, IXTY1N100P.
Please refer to the document for exact specifications by model.
IXTA1N100P, IXTY1N100P, Power MOSFET
PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY1N100P IXTA1N100P IXTP1N100P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 1000 V 1000 V 20 V 30 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150°C TC = 25C 1.0 1.8 1.0 100 10 50 -55 +150 150 -55 +150 A A A mJ V/ns W
IXTA1N100P Features
* International Standard Packages
* Low QG
* Avalanche Rated
* Low Package Inductance
* Fast Intrinsic Rectifier Advantages
* High Power Density
* Easy to Mount
* Space Savings Applications
* DC-DC Converters
* Switch-Mode and Resonant-Mode Power Supplies
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