IXTA1N100P Datasheet - IXYS

IXTA1N100P Power MOSFET

PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY1N100P IXTA1N100P IXTP1N100P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 1000 V 1000 V 20 V 30 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 1.0 1.8 1.0 100 10 50 -55 +150 150 -55 +150 A A A mJ V/ns W .

IXTA1N100P Features

* International Standard Packages

* Low QG

* Avalanche Rated

* Low Package Inductance

* Fast Intrinsic Rectifier Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* DC-DC Converters

* Switch-Mode and Resonant-Mode Power Supplies

IXTA1N100P Datasheet (296.83 KB)

IXTA1N100P Datasheet Preview — Preview of IXTA1N100P PDF

Datasheet Details

Part number:

IXTA1N100P

Manufacturer:

IXYS

File Size:

296.83 KB

Description:

Power mosfet.

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IXTA1N100P Power MOSFET IXYS

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