IXTA1N200P3HV High Voltage Power MOSFET

IXYS

Description

High Voltage Power MOSFET IXTA1N200P3HV IXTH1N200P3HV IXTH1N200P3 VDSS I D25 RDS(on) = 2000V = 1.0A  40 N-Channel Enhancement Mode Symbol VDSS.

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Datasheet Specifications

Part number: IXTA1N200P3HV
Manufacturer: IXYS
File Size: 275.74 KB
Datasheet: IXTA1N200P3HV-IXYS.pdf
Description: High Voltage Power MOSFET

Features

* High Blocking Voltage
* High Voltage Packages Advantages
* Easy to Mount
* Space Savings

Applications

* High Voltage Power Supplies
* Capacitor Discharge Applications
* Pulse Circuits
* Laser and X-Ray Generation Systems © 2017 IXYS CORPORATION, All Rights Reserved. DS100563B(2/17) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 50V, ID = 0.5A, Note 1

IXTA1N200P3HV Distributors

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IXTA1N200P3HV High Voltage Power MOSFET IXYS

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