IXTA1N200P3HV Datasheet (IXYS) - High Voltage Power MOSFET

IXTA1N200P3HV, High Voltage Power MOSFET

High Voltage Power MOSFET IXTA1N200P3HV IXTH1N200P3HV IXTH1N200P3 VDSS I D25 RDS(on) = 2000V = 1.0A  40 N-Channel Enhancement Mode Symbol VDSS VDGR VGSS VGSM ID25 ID110 IDM PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 2000 V 2000 V 20 V 30 V TC = 25C TC = 110C TC = 25C, Pulse Width Limited by TJM 1.0 A 0.6 A 3.0 A TC = 25C 125 W - 55 +150 C 150 C - 55 +150 C

IXTA1N200P3HV Features

* High Blocking Voltage

* High Voltage Packages Advantages

* Easy to Mount

* Space Savings

* High Power Density Applications

* High Voltage Power Supplies

* Capacitor Discharge Applications

* Pulse Circuits