IXTA1N80 Datasheet - IXYS

IXTA1N80 High Voltage MOSFET

www.DataSheet4U.com High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated Preliminary Data IXTA 1N80 IXTP 1N80 IXTY 1N80 VDSS ID25 RDS(on) = 800 V = 750 mA = 11 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM Maximum Ratings 800 800 ± 20 ± 30 750 3 1.0 V V V V mA A A mJ mJ V/ns W °C °C °C TO-220AB (IXTP) GD.

IXTA1N80 Features

* Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions ! International standard packages ! High voltage, Low RDS (on) HDMOSTM process Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2.5 4.5 ±100 TJ = 25°C TJ = 125°C 9.5

IXTA1N80 Datasheet (81.05 KB)

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Datasheet Details

Part number:

IXTA1N80

Manufacturer:

IXYS

File Size:

81.05 KB

Description:

High voltage mosfet.

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IXTA1N80 High Voltage MOSFET IXYS

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