IXTA200N055T2 Datasheet, Mosfet, INCHANGE

IXTA200N055T2 Features

  • Mosfet
  • Static drain-source on-resistance: RDS(on) ≤ 4.2mΩ@VGS=10V
  • Fully characterized avalanche voltage and current
  • 100% avalanche tested
  • Minimum Lot-to-Lot

PDF File Details

Part number:

IXTA200N055T2

Manufacturer:

INCHANGE

File Size:

250.24kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

Datasheet Preview: IXTA200N055T2 📥 Download PDF (250.24kb)
Page 2 of IXTA200N055T2

IXTA200N055T2 Application

  • Applications
  • ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 55 VGS Gate-Source Voltage ±20 ID

TAGS

IXTA200N055T2
N-Channel
MOSFET
INCHANGE

📁 Related Datasheet

IXTA200N055T2 - Power MOSFET (IXYS)
TrenchT2TM Power MOSFET IXTA200N055T2 IXTP200N055T2 VDSS = ID25 = RDS(on) ≤ 55V 200A 4.2mΩ N-Channel Enhancement Mode Avalanche Rated TO-263 Sym.

IXTA200N055T2-7 - Power MOSFET (IXYS)
TrenchT2TM Power MOSFET Preliminary Technical Information IXTA200N055T2-7 VDSS = ID25 = RDS(on) ≤ 55V 200A 4.2mΩ N-Channel Enhancement Mode Avala.

IXTA200N075T - Power MOSFET (IXYS)
Preliminary Technical Information TrenchMVTM Power MOSFET IXTA200N075T IXTP200N075T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(o.

IXTA200N075T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 5.0mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.

IXTA200N075T7 - Power MOSFET (IXYS Corporation)
Preliminary Technical Information TrenchMVTM IXTA200N075T7 Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 75 20.

IXTA200N085T - Power MOSFET (IXYS)
Preliminary Technical Information TrenchMVTM Power MOSFET IXTA 200N085T IXTP 200N085T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS.

IXTA200N085T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 5.0mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.

IXTA200N085T7 - Power MOSFET (IXYS Corporation)
Preliminary Technical Information TrenchMVTM IXTA200N085T7 Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 85 20.

IXTA20N65X - Power MOSFET (IXYS)
Preliminary Technical Information X-Class Power MOSFET N-Channel Enhancement Mode IXTA20N65X IXTP20N65X IXTH20N65X VDSS = ID25 = RDS(on) 650V 20A.

IXTA20N65X - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) ≤ 210mΩ@VGS= 10V ·Fas.

Stock and price

part
Littelfuse Inc
MOSFET N-CH 55V 200A TO263
DigiKey
IXTA200N055T2
1199 In Stock
Qty : 1000 units
Unit Price : $1.9
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts