IXTA20N65X Datasheet, Mosfet, IXYS

IXTA20N65X Features

  • Mosfet
  • International Standard Packages
  • Low RDS(ON) and QG
  • Low Package Inductance Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0

PDF File Details

Part number:

IXTA20N65X

Manufacturer:

IXYS

File Size:

232.73kb

Download:

📄 Datasheet

Description:

Power mosfet.

Datasheet Preview: IXTA20N65X 📥 Download PDF (232.73kb)
Page 2 of IXTA20N65X Page 3 of IXTA20N65X

IXTA20N65X Application

  • Applications
  • Switch-Mode and Resonant-Mode Power Supplies
  • DC-DC Converters
  • PFC Circuits
  • AC and DC Motor Driv

TAGS

IXTA20N65X
Power
MOSFET
IXYS

📁 Related Datasheet

IXTA20N65X - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) ≤ 210mΩ@VGS= 10V ·Fas.

IXTA200N055T2 - Power MOSFET (IXYS)
TrenchT2TM Power MOSFET IXTA200N055T2 IXTP200N055T2 VDSS = ID25 = RDS(on) ≤ 55V 200A 4.2mΩ N-Channel Enhancement Mode Avalanche Rated TO-263 Sym.

IXTA200N055T2 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 4.2mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.

IXTA200N055T2-7 - Power MOSFET (IXYS)
TrenchT2TM Power MOSFET Preliminary Technical Information IXTA200N055T2-7 VDSS = ID25 = RDS(on) ≤ 55V 200A 4.2mΩ N-Channel Enhancement Mode Avala.

IXTA200N075T - Power MOSFET (IXYS)
Preliminary Technical Information TrenchMVTM Power MOSFET IXTA200N075T IXTP200N075T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(o.

IXTA200N075T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 5.0mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.

IXTA200N075T7 - Power MOSFET (IXYS Corporation)
Preliminary Technical Information TrenchMVTM IXTA200N075T7 Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 75 20.

IXTA200N085T - Power MOSFET (IXYS)
Preliminary Technical Information TrenchMVTM Power MOSFET IXTA 200N085T IXTP 200N085T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS.

IXTA200N085T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 5.0mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.

IXTA200N085T7 - Power MOSFET (IXYS Corporation)
Preliminary Technical Information TrenchMVTM IXTA200N085T7 Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 85 20.

Stock and price

IXYS Corporation
MOSFET N-CH 650V 20A TO263
DigiKey
IXTA20N65X
0 In Stock
Qty : 50 units
Unit Price : $7.09
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts