* °C °C °C Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance °C - easy to drive and to protect °C 175 °C Operating Temperature g Advantages Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS
IXTA220N075T7 Datasheet (157.55 KB)
IXTA220N075T7
IXYS Corporation
157.55 KB
Power mosfet.
Preliminary Technical Information TrenchMVTM Power MOSFET IXTA220N075T7 N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 75 220.
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