IXTA220N075T7 Datasheet - IXYS Corporation

IXTA220N075T7 Power MOSFET

Preliminary Technical Information TrenchMVTM Power MOSFET IXTA220N075T7 N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 75 220 4.5 V A mΩ Symbol VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt PD TJ TJM Tstg TL Tsold Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Package Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 3.3 Ω TC = 25°C 1.6 mm (0.0.

IXTA220N075T7 Features

* °C °C °C Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance °C - easy to drive and to protect °C 175 °C Operating Temperature g Advantages Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS

IXTA220N075T7 Datasheet (157.55 KB)