IXTA200N055T2-7 Datasheet - IXYS

IXTA200N055T2-7 Power MOSFET

TrenchT2TM Power MOSFET Preliminary Technical Information IXTA200N055T2-7 VDSS = ID25 = RDS(on) ≤ 55V 200A 4.2mΩ N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Tsold Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Symbol Test Conditio.

IXTA200N055T2-7 Features

* z International standard package z 175°C Operating Temperature z High current handling capability z Avalanche rated z Low RDS(on) Advantages z Easy to mount z Space savings z High power density Applications z Automotive - Motor Drives - 12V Battery - ABS Systems z DC/DC Converters and Off-line UPS z

IXTA200N055T2-7-IXYS.pdf