* W Ultra-low On Resistance °C °C °C Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect °C 175 ° C Operating Temperature °C Advantages g Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25° C unless otherwise specified)
IXTA200N075T7 Datasheet (189.10 KB)
IXTA200N075T7
IXYS Corporation
189.10 KB
Power mosfet.
Preliminary Technical Information
TrenchMVTM
IXTA200N075T7
Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
75 20.
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