Preliminary Technical Information TrenchMVTM IXTA200N075T7 Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 75 200 5.0 V A mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Package Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG = 5 Ω TC = 25° C 1.6 m
IXTA200N075T7-IXYSCorporation.pdf
Datasheet Details
Part number:
IXTA200N075T7
Manufacturer:
IXYS Corporation
File Size:
189.10 KB
Description:
Power mosfet.