IXTA200N075T7 Datasheet - IXYS Corporation

IXTA200N075T7, Power MOSFET

Preliminary Technical Information TrenchMVTM IXTA200N075T7 Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 75 20.

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IXTA200N075T7-IXYSCorporation.pdf

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Datasheet Details

Part number:

IXTA200N075T7

Manufacturer:

IXYS Corporation

File Size:

189.10 KB

Description:

Power MOSFET

Features

* W Ultra-low On Resistance °C °C °C Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect °C 175 ° C Operating Temperature °C Advantages g Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25° C unless otherwise specified)

Applications

* Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems High Current Switching Applications © 2006 IXYS CORPORATION All rights reserved DS99691 (11/06) IXTA200N075T7 Symbol Test Conditions (TJ = 25° C unless otherwise spe

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IXTA200N075T7 Power MOSFET IXYS Corporation

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