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IXTA220N075T Power MOSFET

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Description

Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA220N075T IXTP220N075T VDSS = ID25 = RDS(on.

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Datasheet Specifications

Part number
IXTA220N075T
Manufacturer
IXYS Corporation
File Size
169.58 KB
Datasheet
IXTA220N075T-IXYSCorporation.pdf
Description
Power MOSFET

Features

* Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 μA VGS(th) VDS = VGS, ID = 250 μA IGSS VGS = ± 20 V, VD

Applications

* Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems High Current Switching Applications © 2006 IXYS CORPORATION All rights reserved DS99611 (11/06) IXTA220N075T IXTP220N075T Symbol Test Conditions (TJ = 25°C unless ot

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