IXTA2N100 Datasheet, Mosfet, IXYS Corporation

IXTA2N100 Features

  • Mosfet z International Standard Packages z Avalanche Rated z Low Package Inductance (< 5nH) z Fast Switching Times Advantages z Easy to Mount z Space Savings z High Power Density Applications

PDF File Details

Part number:

IXTA2N100

Manufacturer:

IXYS Corporation

File Size:

141.22kb

Download:

📄 Datasheet

Description:

High voltage mosfet.

Datasheet Preview: IXTA2N100 📥 Download PDF (141.22kb)
Page 2 of IXTA2N100 Page 3 of IXTA2N100

IXTA2N100 Application

  • Applications z Switched-Mode and Resonant-Mode Power Supplies z FlyBack Inverters z DC Choppers © 2009 IXYS CORPORATION, All Rights Reserved DS975

TAGS

IXTA2N100
High
Voltage
MOSFET
IXYS Corporation

📁 Related Datasheet

IXTA2N100 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 7Ω@VGS=10V ·Fully characterized avalanche voltage and current.

IXTA2N100P - Power MOSFET (IXYS)
PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY2N100P IXTA2N100P IXTP2N100P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD.

IXTA2N100P - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 7.5Ω@VGS=10V ·Fully characterized avalanche voltage and curre.

IXTA2N80 - High Voltage MOSFET (IXYS Corporation)
Advanced Technical Information High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTA 2N80 IXTP 2N80 VDSS ID25 RDS(on) = 800 V.

IXTA2N80 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.2Ω@VGS=10V ·Fully characterized avalanche voltage and curre.

IXTA2N80P - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6Ω@VGS=10V ·Fully characterized avalanche voltage and current.

IXTA2N80P - Power MOSFET (IXYS)
PolarTM Power MOSFET IXTU2N80P IXTY2N80P IXTA2N80P VDSS = ID25 =  RDS(on) 800V 2A 6 N-Channel Enhancement Mode IXTP2N80P TO-251 (IXTU) Avalan.

IXTA200N055T2 - Power MOSFET (IXYS)
TrenchT2TM Power MOSFET IXTA200N055T2 IXTP200N055T2 VDSS = ID25 = RDS(on) ≤ 55V 200A 4.2mΩ N-Channel Enhancement Mode Avalanche Rated TO-263 Sym.

IXTA200N055T2 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 4.2mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.

IXTA200N055T2-7 - Power MOSFET (IXYS)
TrenchT2TM Power MOSFET Preliminary Technical Information IXTA200N055T2-7 VDSS = ID25 = RDS(on) ≤ 55V 200A 4.2mΩ N-Channel Enhancement Mode Avala.

Stock and price

IXYS Corporation
MOSFETs 2 Amps 1000V 7 Rds
Mouser Electronics
IXTA2N100
0 In Stock
0
Unit Price : $0
No Longer Stocked
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts