* Maximum lead temperature for soldering International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Symbol Test Conditions Characteristic Values (TJ = 25°C, unless
IXTA2N80
IXYS Corporation
49.66 KB
High voltage mosfet.
Advanced Technical Information
High Voltage MOSFET
N-Channel Enhancement Mode Avalanche Energy Rated
IXTA 2N80 IXTP 2N80
VDSS ID25
RDS(on)
= 800 V.
📁 Related Datasheet
IXTA2N80 - N-Channel MOSFET
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isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 6.2Ω@VGS=10V ·Fully characterized avalanche voltage and curre.
IXTA2N80P - N-Channel MOSFET
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isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 6Ω@VGS=10V ·Fully characterized avalanche voltage and current.
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IXTU2N80P IXTY2N80P IXTA2N80P
VDSS =
ID25 = RDS(on)
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N-Channel Enhancement Mode
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IXTA2N100 - High Voltage MOSFET
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High Voltage MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA2N100 IXTP2N100
VDSS = ID25 = ≤RDS(on)
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TO-263 (IXTA)
Symbol VDSS V.
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isc N-Channel MOSFET Transistor
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IXTY2N100P IXTA2N100P IXTP2N100P
Symbol
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PD.
IXTA2N100P - N-Channel MOSFET
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isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
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IXTA200N055T2 - Power MOSFET
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IXTA200N055T2 IXTP200N055T2
VDSS = ID25 =
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N-Channel Enhancement Mode Avalanche Rated
TO-263
Sym.
