IXTA2N80 Datasheet - IXYS Corporation

IXTA2N80 High Voltage MOSFET

Advanced Technical Information High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTA 2N80 IXTP 2N80 VDSS ID25 RDS(on) = 800 V = 2 A = 6.2 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM Maximum Ratings 800 800 ±20 ±30 2 8 2 V V V V A A A mJ mJ V/ns W °C °C °C Nm/lb.in. 4 300 g °C TO-220AB (IXTP) GD S .

IXTA2N80 Features

* Maximum lead temperature for soldering International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Symbol Test Conditions Characteristic Values (TJ = 25°C, unless

IXTA2N80 Datasheet (49.66 KB)

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Datasheet Details

Part number:

IXTA2N80

Manufacturer:

IXYS Corporation

File Size:

49.66 KB

Description:

High voltage mosfet.

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