IXTA2N80P
INCHANGE
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N-channel mosfet.
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IXTA2N80 - High Voltage MOSFET
(IXYS Corporation)
Advanced Technical Information
High Voltage MOSFET
N-Channel Enhancement Mode Avalanche Energy Rated
IXTA 2N80 IXTP 2N80
VDSS ID25
RDS(on)
= 800 V.
IXTA2N80 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 6.2Ω@VGS=10V ·Fully characterized avalanche voltage and curre.
IXTA2N80P - Power MOSFET
(IXYS)
PolarTM Power MOSFET
IXTU2N80P IXTY2N80P IXTA2N80P
VDSS =
ID25 = RDS(on)
800V 2A 6
N-Channel Enhancement Mode
IXTP2N80P
TO-251 (IXTU)
Avalan.
IXTA2N100 - High Voltage MOSFET
(IXYS Corporation)
High Voltage MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA2N100 IXTP2N100
VDSS = ID25 = ≤RDS(on)
1000V 2A 7Ω
TO-263 (IXTA)
Symbol VDSS V.
IXTA2N100 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 7Ω@VGS=10V ·Fully characterized avalanche voltage and current.
IXTA2N100P - Power MOSFET
(IXYS)
PolarTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTY2N100P IXTA2N100P IXTP2N100P
Symbol
VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt
PD.
IXTA2N100P - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 7.5Ω@VGS=10V ·Fully characterized avalanche voltage and curre.
IXTA200N055T2 - Power MOSFET
(IXYS)
TrenchT2TM Power MOSFET
IXTA200N055T2 IXTP200N055T2
VDSS = ID25 =
RDS(on) ≤
55V 200A 4.2mΩ
N-Channel Enhancement Mode Avalanche Rated
TO-263
Sym.
IXTA200N055T2 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 4.2mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.
IXTA200N055T2-7 - Power MOSFET
(IXYS)
TrenchT2TM Power MOSFET
Preliminary Technical Information
IXTA200N055T2-7
VDSS = ID25 =
RDS(on) ≤
55V 200A 4.2mΩ
N-Channel Enhancement Mode Avala.