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IXTA220N055T - N-Channel MOSFET

IXTA220N055T Product details

Features

  • Static drain-source on-resistance: RDS(on) ≤ 4.0mΩ@VGS=10V.
  • Fully characterized avalanche voltage and current.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet Details

Part number
IXTA220N055T
Manufacturer
INCHANGE
File Size
250.23 KB
Datasheet
IXTA220N055T-INCHANGE.pdf
Description
N-Channel MOSFET

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