IXTA200N055T2
IXYS
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Power mosfet.
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IXTA200N055T2 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 4.2mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.
IXTA200N055T2-7 - Power MOSFET
(IXYS)
TrenchT2TM Power MOSFET
Preliminary Technical Information
IXTA200N055T2-7
VDSS = ID25 =
RDS(on) ≤
55V 200A 4.2mΩ
N-Channel Enhancement Mode Avala.
IXTA200N075T - Power MOSFET
(IXYS)
Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTA200N075T IXTP200N075T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(o.
IXTA200N075T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 5.0mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.
IXTA200N075T7 - Power MOSFET
(IXYS Corporation)
Preliminary Technical Information
TrenchMVTM
IXTA200N075T7
Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
75 20.
IXTA200N085T - Power MOSFET
(IXYS)
Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTA 200N085T IXTP 200N085T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS.
IXTA200N085T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 5.0mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.
IXTA200N085T7 - Power MOSFET
(IXYS Corporation)
Preliminary Technical Information
TrenchMVTM
IXTA200N085T7
Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
85 20.
IXTA20N65X - Power MOSFET
(IXYS)
Preliminary Technical Information
X-Class Power MOSFET
N-Channel Enhancement Mode
IXTA20N65X IXTP20N65X IXTH20N65X
VDSS = ID25 = RDS(on)
650V 20A.
IXTA20N65X - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 650V(Min) ·Static Drain-Source On-Resistance
: RDS(on) ≤ 210mΩ@VGS= 10V ·Fas.