IXTA200N055T2 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 4.2mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.
IXTA200N055T2-7 - Power MOSFET
(IXYS)
TrenchT2TM Power MOSFET
Preliminary Technical Information
IXTA200N055T2-7
VDSS = ID25 =
RDS(on) ≤
55V 200A 4.2mΩ
N-Channel Enhancement Mode Avala.
IXTA200N075T - Power MOSFET
(IXYS)
Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTA200N075T IXTP200N075T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(o.
IXTA200N075T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 5.0mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.
IXTA200N075T7 - Power MOSFET
(IXYS Corporation)
Preliminary Technical Information
TrenchMVTM
IXTA200N075T7
Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
75 20.
IXTA200N085T - Power MOSFET
(IXYS)
Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTA 200N085T IXTP 200N085T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS.
IXTA200N085T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 5.0mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.
IXTA200N085T7 - Power MOSFET
(IXYS Corporation)
Preliminary Technical Information
TrenchMVTM
IXTA200N085T7
Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
85 20.