* °C Ultra-low On Resistance °C Unclamped Inductive Switching (UIS) °C °C rated Low package inductance - easy to drive and to protect g 175 °C Operating Temperature Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 μA VGS(th) VDS = VGS, ID = 250 μA IG
IXTA200N085T7 Datasheet (168.29 KB)
IXTA200N085T7
IXYS Corporation
168.29 KB
Power mosfet.
Preliminary Technical Information
TrenchMVTM
IXTA200N085T7
Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
85 20.
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