IXTA200N085T7 Datasheet - IXYS Corporation

IXTA200N085T7, Power MOSFET

Preliminary Technical Information TrenchMVTM IXTA200N085T7 Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 85 20.

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IXTA200N085T7-IXYSCorporation.pdf

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Datasheet Details

Part number:

IXTA200N085T7

Manufacturer:

IXYS Corporation

File Size:

168.29 KB

Description:

Power MOSFET

Features

* °C Ultra-low On Resistance °C Unclamped Inductive Switching (UIS) °C °C rated Low package inductance - easy to drive and to protect g 175 °C Operating Temperature Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 μA VGS(th) VDS = VGS, ID = 250 μA IG

Applications

* Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems High Current Switching Applications © 2006 IXYS CORPORATION All rights reserved Downloaded from Elcodis. com electronic components distributor DS99702 (11/06) IXTA200N08

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IXTA200N085T7 Power MOSFET IXYS Corporation

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