Datasheet Specifications
- Part number
- IXTA200N085T7
- Manufacturer
- IXYS Corporation
- File Size
- 168.29 KB
- Datasheet
- IXTA200N085T7-IXYSCorporation.pdf
- Description
- Power MOSFET
Description
Preliminary Technical Information TrenchMVTM IXTA200N085T7 Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 85 20.
Features
* °C Ultra-low On Resistance °C Unclamped Inductive Switching (UIS) °C °C rated Low package inductance - easy to drive and to protect g 175 °C Operating Temperature Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 μA VGS(th) VDS = VGS, ID = 250 μA IGApplications
* Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems High Current Switching Applications © 2006 IXYS CORPORATION All rights reserved Downloaded from Elcodis. com electronic components distributor DS99702 (11/06) IXTA200N08IXTA200N085T7 Distributors
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