IXTA200N085T7 Datasheet - IXYS Corporation

IXTA200N085T7 Power MOSFET

Preliminary Technical Information TrenchMVTM IXTA200N085T7 Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 85 200 5.0 V A mΩ Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Weight TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Lead Limited, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 17.

IXTA200N085T7 Features

* °C Ultra-low On Resistance °C Unclamped Inductive Switching (UIS) °C °C rated Low package inductance - easy to drive and to protect g 175 °C Operating Temperature Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 μA VGS(th) VDS = VGS, ID = 250 μA IG

IXTA200N085T7-IXYSCorporation.pdf