INCHANGE manufacturer logo Part number: IXTA28P065T Manufacturer: INCHANGE File Size: 248.43 KB Download: 📄 Datasheet Description: P-channel mosfet.
IXTA28P065T Datasheet PDF IXTA28P065T, IXYS TrenchPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTA28P065T IXTP28P065T VDSS = ID25 = ≤ RDS(on) - 65V - 28A 45mΩ TO-263 AA (IXT.
IXTA200N055T2 Datasheet PDF IXTA200N055T2, IXYS TrenchT2TM Power MOSFET IXTA200N055T2 IXTP200N055T2 VDSS = ID25 = RDS(on) ≤ 55V 200A 4.2mΩ N-Channel Enhancement Mode Avalanche Rated TO-263 Sym.
IXTA200N055T2 Datasheet PDF IXTA200N055T2, INCHANGE isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 4.2mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.
IXTA200N055T2-7 Datasheet PDF IXTA200N055T2-7, IXYS TrenchT2TM Power MOSFET Preliminary Technical Information IXTA200N055T2-7 VDSS = ID25 = RDS(on) ≤ 55V 200A 4.2mΩ N-Channel Enhancement Mode Avala.
IXTA200N075T Datasheet PDF IXTA200N075T, IXYS Preliminary Technical Information TrenchMVTM Power MOSFET IXTA200N075T IXTP200N075T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(o.
IXTA200N075T Datasheet PDF IXTA200N075T, INCHANGE isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 5.0mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.
IXTA200N075T7 Datasheet PDF IXTA200N075T7, IXYS Corporation Preliminary Technical Information TrenchMVTM IXTA200N075T7 Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 75 20.
IXTA200N085T Datasheet PDF IXTA200N085T, IXYS Preliminary Technical Information TrenchMVTM Power MOSFET IXTA 200N085T IXTP 200N085T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS.
