INCHANGE manufacturer logo Part number: IXTA90N055T2 Manufacturer: INCHANGE File Size: 250.92kb Download: 📄 Datasheet Description: N-channel mosfet.
IXTA90N055T - Power MOSFET (IXYS Corporation) Preliminary Technical Information TrenchMVTM Power MOSFET IXTA90N055T IXTP90N055T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on).
IXTA90N055T - N-Channel MOSFET (INCHANGE) isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 8.8mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.
IXTA90N055T2 - Power MOSFET (IXYS) TrenchT2TM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated IXTY90N055T2 IXTA90N055T2 IXTP90N055T2 Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA E.
IXTA90N075T2 - Power MOSFET (IXYS) TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA90N075T2 IXTP90N075T2 Symbol VDSS VDGR VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL.
IXTA90N075T2 - N-Channel MOSFET (INCHANGE) isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 10mΩ@VGS=10V ·Fully characterized avalanche voltage and curre.
IXTA90N15T - N-Channel MOSFET (INCHANGE) isc N-Channel MOSFET Transistor IXTA90N15T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 20mΩ@VGS=10V ·Fully characterized avalanche volta.
IXTA90N15T - Power MOSFET (IXYS) Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA90N15T IXTH90N15T IXTP90N15T IXTQ90N15T V.
IXTA96N25T - N-Channel MOSFET (INCHANGE) isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 44mΩ(Max) ·Fast Swi.
IXTA96P085T - Power MOSFET (IXYS) TrenchPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTA96P085T IXTP96P085T IXTH96P085T Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD.
IXTA98N075T - Power MOSFET (IXYS Corporation) Advance Technical Information TrenchMVTM Power MOSFET IXTA98N075T IXTP98N075T N-Channel Enhancement Mode VDSS = ID25 = RDS(on) ≤ 75 V 98 A 10 mΩ .
