IXTA90N055T2 N-Channel MOSFET

INCHANGE

IXTA90N055T2 Description

isc N-Channel MOSFET Transistor *.

IXTA90N055T2 Features

* Static drain-source on-resistance: RDS(on) ≤ 8.4mΩ@VGS=10V
* Fully characterized avalanche voltage and current
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IXTA90N055T2 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 55 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 90 IDM Drain Current-Single Pulsed 230 PD Total Dissipation @TC=25℃ 150 Tj Operating Junction Temperature -55~175 Tstg Storage Tem

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Datasheet Details

Part number: IXTA90N055T2
Manufacturer: INCHANGE
File Size: 250.92 KB
Datasheet: IXTA90N055T2-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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