IXTA98N075T
IXYS Corporation
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Power mosfet.
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IXTA98N075T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 10mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot varia.
IXTA90N055T - Power MOSFET
(IXYS Corporation)
Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTA90N055T IXTP90N055T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on).
IXTA90N055T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 8.8mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.
IXTA90N055T2 - Power MOSFET
(IXYS)
TrenchT2TM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated
IXTY90N055T2 IXTA90N055T2 IXTP90N055T2
Symbol VDSS VDGR
VGSM ID25 ILRMS IDM IA E.
IXTA90N055T2 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 8.4mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.
IXTA90N075T2 - Power MOSFET
(IXYS)
TrenchT2TM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA90N075T2 IXTP90N075T2
Symbol
VDSS VDGR
VGSM
ID25 IDM
IA EAS
PD
TJ TJM Tstg TL.
IXTA90N075T2 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 10mΩ@VGS=10V ·Fully characterized avalanche voltage and curre.
IXTA90N15T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTA90N15T
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 20mΩ@VGS=10V ·Fully characterized avalanche volta.
IXTA90N15T - Power MOSFET
(IXYS)
Preliminary Technical Information
Trench Gate Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA90N15T IXTH90N15T IXTP90N15T IXTQ90N15T
V.
IXTA96N25T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 250V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 44mΩ(Max) ·Fast Swi.
