Datasheet Specifications
- Part number
- IXTA90N055T
- Manufacturer
- IXYS Corporation
- File Size
- 205.70 KB
- Datasheet
- IXTA90N055T-IXYSCorporation.pdf
- Description
- Power MOSFET
Description
Preliminary Technical Information TrenchMVTM Power MOSFET IXTA90N055T IXTP90N055T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on).
Features
* Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Symbol Test Conditions (TJ = 25° C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 50 µA IGSS VGS = ± 20 V, VApplications
* Automotive - Motor Drives - High Side Switch - 12V Battery - ABS Systems DC/DC Converters and Off-line UPS Primary- Side Switch High Current Switching Applications © 2006 IXYS CORPORATION All rights reserved DS99624 (11/06) IXTA90N055T IXTP90N055T Symbol Test Conditions (TJ = 25° C unless otheIXTA90N055T Distributors
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