IXTA90N075T2 N-Channel MOSFET

INCHANGE

IXTA90N075T2 Description

isc N-Channel MOSFET Transistor *.

IXTA90N075T2 Features

* Static drain-source on-resistance: RDS(on) ≤ 10mΩ@VGS=10V
* Fully characterized avalanche voltage and current
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IXTA90N075T2 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 75 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 90 IDM Drain Current-Single Pulsed 225 PD Total Dissipation @TC=25℃ 180 Tj Operating Junction Temperature -55~175 Tstg Storage Tem

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Datasheet Details

Part number: IXTA90N075T2
Manufacturer: INCHANGE
File Size: 251.07 KB
Datasheet: IXTA90N075T2-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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