IXTH160N10T N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor *.

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Datasheet Specifications

Part number: IXTH160N10T
Manufacturer: INCHANGE
File Size: 334.62 KB
Datasheet: IXTH160N10T-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* Static drain-source on-resistance: RDS(on) ≤ 7.0mΩ@VGS=10V
* Fully characterized avalanche voltage and current
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 160 A IDM Drain Current-Single Pulsed PD Total Dissipation @TC=25℃ 430 A 430 W Tj Operating Junction Temperature -55

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IXTH160N10T N-Channel MOSFET INCHANGE

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