IXTH160N10T Datasheet, Mosfet, INCHANGE

IXTH160N10T Features

• Mosfet
• Static drain-source on-resistance: RDS(on) ≤ 7.0mΩ@VGS=10V
• Fully characterized avalanche voltage and current
• 100% avalanche tested
• Minimum Lot-to-Lot

PDF File Details

Part number:

IXTH160N10T

Manufacturer:

INCHANGE

File Size:

334.62kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

IXTH160N10T Application

• Applications
• ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltag

TAGS

IXTH160N10T

INCHANGE

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