IXTH300N04T2 Datasheet - INCHANGE

IXTH300N04T2 - N-Channel MOSFET

IXTH300N04T2 Features

* Static drain-source on-resistance: RDS(on) ≤ 2.5mΩ@VGS=10V

* Fully characterized avalanche voltage and current

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* APPLICATION

* DC/DC Converters

* High Current Switchin

Datasheet Details

IXTH300N04T2

INCHANGE

335.20 KB

N-channel mosfet.

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