* z International standard package JEDEC TO-247 AD z Low R HDMOSTM process DS (on) z Rugged polysilicon gate cell structure z Fast switching times Symbol V DSS VGS(th) IGSS IDSS R DS(on) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. V = 0 V, I
IXTH30N50 Datasheet (59.23 KB)
IXTH30N50
IXYS Corporation
59.23 KB
Power mosfet.
MegaMOSTMFET
N-Channel Enhancement Mode
IXTH 30N50
VDSS = 500 V
ID (cont) =
30 A
RDS(on) = 0.17 Ω
Symbol
V DSS
V DGR V
GS
VGSM ID25 I
DM
PD TJ T.
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