IXTH30N50 Datasheet - IXYS Corporation

IXTH30N50, Power MOSFET

MegaMOSTMFET N-Channel Enhancement Mode IXTH 30N50 VDSS = 500 V ID (cont) = 30 A RDS(on) = 0.17 Ω Symbol V DSS V DGR V GS VGSM ID25 I DM PD TJ T.

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IXTH30N50_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXTH30N50

Manufacturer:

IXYS Corporation

File Size:

59.23 KB

Description:

Power MOSFET

Features

* z International standard package JEDEC TO-247 AD z Low R HDMOSTM process DS (on) z Rugged polysilicon gate cell structure z Fast switching times Symbol V DSS VGS(th) IGSS IDSS R DS(on) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. V = 0 V, I

Applications

* z Switch-mode and resonant-mode power supplies z Motor controls z Uninterruptible Power Supplies (UPS) z DC choppers Advantages z Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) z Space savings z High power density © 2002 IXYS All rights reserved 94569-E (8/02) IXTH 30N50 Symb

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IXTH30N50 Power MOSFET IXYS Corporation

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