IXTH30N50 Datasheet - IXYS Corporation

IXTH30N50 Power MOSFET

MegaMOSTMFET N-Channel Enhancement Mode IXTH 30N50 VDSS = 500 V ID (cont) = 30 A RDS(on) = 0.17 Ω Symbol V DSS V DGR V GS VGSM ID25 I DM PD TJ TJM Tstg TL Md Weight Test Conditions T J = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C T C = 25°C, pulse width limited by T JM TC = 25°C 1.6 mm (0.063 in) from case for 10 s Mounting torque Maximum Ratings TO-247 AD 500 V 500 V ±20 V ±30 V 30 A 120 A 360 W -55 +150 °C 150 °C -55 .

IXTH30N50 Features

* z International standard package JEDEC TO-247 AD z Low R HDMOSTM process DS (on) z Rugged polysilicon gate cell structure z Fast switching times Symbol V DSS VGS(th) IGSS IDSS R DS(on) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. V = 0 V, I

IXTH30N50_IXYSCorporation.pdf