* International standard package JEDEC TO-247 AD
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low package inductance (
IXTH36P10 Datasheet (85.35 KB)
IXTH36P10
IXYS Corporation
85.35 KB
Standard power mosfet.
Advance Technical Information
Standard Power MOSFET
P-Channel Enhancement Mode Avalanche Rated
IXTH 36P10
VDSS
ID25
RDS(on)
= -100 V = -36 A = 75 .
📁 Related Datasheet
IXTH36P10 P-Channel MOSFET (INCHANGE)
IXTH36N50P N-Channel MOSFET (INCHANGE)
IXTH36N50P PolarHV Power MOSFET (IXYS)
IXTH300N04T2 N-Channel MOSFET (INCHANGE)
IXTH300N04T2 Power MOSFET (IXYS)
IXTH30N45 N-Channel MOSFET (IXYS)
IXTH30N50 Power MOSFET (IXYS Corporation)
IXTH30N50 N-Channel MOSFET (INCHANGE)
IXTH30N50L N-Channel MOSFET (INCHANGE)
IXTH30N50L Power MOSFET (IXYS)
