* International standard package JEDEC TO-247 AD
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low package inductance (
IXTH36P10 Datasheet (85.35 KB)
IXTH36P10
IXYS Corporation
85.35 KB
Standard power mosfet.
Advance Technical Information Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH 36P10 VDSS ID25 RDS(on) = -100 V = -36 A = 75 .
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