IXTH36P10 Datasheet - IXYS Corporation

IXTH36P10 Standard Power MOSFET

Advance Technical Information Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH 36P10 VDSS ID25 RDS(on) = -100 V = -36 A = 75 mΩ Symbol VDSS VDGR VGS VGSM I D25 I DM IAR EAR PD T J T JM Tstg TL M d Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJ TC = 25°C TC = 25°C TC = 25°C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Mounting torque Maximum Rat.

IXTH36P10 Features

* International standard package JEDEC TO-247 AD

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Unclamped Inductive Switching (UIS) rated

* Low package inductance (

IXTH36P10 Datasheet (85.35 KB)