IXTH30N45 Datasheet - IXYS

IXTH30N45 - N-Channel MOSFET

Preliminary Data Sheet MegaMOSTMFET N-Channel Enhancement Mode VDSS IXTH 30N45 450 V IXTH 30N50 500 V ID25 RDS(on) 30 A 0.16 Ω 30 A 0.17 Ω TO-247 AD Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg TL Md Weight Symbol VDSS VGS(th) IGSS IDSS R DS(on) Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient 30N45 30N50 30N45 30N50 450 500 450 500 ±20 ±30 TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 30 120 360 -55 +150 150 -.

IXTH30N45 Features

* International standard package JEDEC TO-247 AD

* Low R DS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* High commutating dv/dt rating

* Fast switching times Applications

* Switch-mode and resonant-mode power supplies

IXTH30N45-IXYS.pdf