IXTH30N45 Datasheet, Mosfet, IXYS

IXTH30N45 Features

• Mosfet
• International standard package JEDEC TO-247 AD
• Low R DS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• High commutating dv/

PDF File Details

Part number:

IXTH30N45

Manufacturer:

IXYS

File Size:

36.67kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

IXTH30N45 Application

• Applications
• Switch-mode and resonant-mode power supplies
• Motor control
• Uninterruptible Power Supplies (UPS)

TAGS

IXTH30N45

IXYS

📁 Related Datasheet

IXTH30N50 - Power MOSFET (IXYS Corporation)
MegaMOSTMFET N-Channel Enhancement Mode IXTH 30N50 VDSS = 500 V ID (cont) = 30 A RDS(on) = 0.17 Ω Symbol V DSS V DGR V GS VGSM ID25 I DM PD TJ T.

IXTH30N50 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 170mΩ(Max) ·Fast Sw.

IXTH30N50L - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXTH30N50L ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Low switching .

IXTH30N50L - Power MOSFET (IXYS)
Preliminary Technical Information Power MOSFET with Extended FBSOA N-Channel Enhancement Mode IXTH30N50L IXTQ30N50L IXTT30N50L D O DD Symbol VDSS V.

IXTH30N50L2 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 200mΩ(Max) ·Fast Sw.

IXTH30N50L2 - Power MOSFET (IXYS)
LinearL2TM Power MOSFET w/ Extended FBSOA IXTH30N50L2 IXTQ30N50L2 IXTT30N50L2 N-Channel Enhancement Mode D O DD R Gi G O ww O S Symbol VDSS VDGR V.

IXTH30N50P - PolarHV Power MOSFET (IXYS)
PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH 30N50P IXTQ 30N50P IXTT 30N50P IXTV 30N50P IXTV 30N50PS V= DSS ID25 = ≤ RDS(o.

IXTH30N50P - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 200mΩ(Max) ·Fast Sw.

IXTH30N60L2 - Power MOSFET (IXYS)
Preliminary Technical Information Linear L2TM Power MOSFET with extended FBSOA N-Channel Enhancement Mode Avalanche rated IXTH30N60L2 IXTQ30N60L2 IX.

IXTH30N60L2 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 240mΩ(Max) ·Fast Sw.