IXTH32P20T Datasheet - IXYS

IXTH32P20T Power MOSFET

Preliminary Technical Information TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA32P20T IXTP32P20T IXTQ32P20T IXTH32P20T TO-263 AA (IXTA) TO-220AB (IXTP) VDSS = ID25 = ≤RDS(on) - 200V - 32A 130mΩ TO-3P (IXTQ) G S D (Tab) GD S D (Tab) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient - 200 - 200 + 15 + 25 V V V V TC = 25°C TC =.

IXTH32P20T Features

* z International Standard Packages z Avalanche Rated z Extended FBSOA z Fast Intrinsic Diode z Low RDS(ON) and QG Advantages z Easy to Mount z Space Savings z High Power Density Applications z High-Side Switching z Push Pull Amplifiers z DC Choppers z Automatic Test Equipment z Current Regulators z B

IXTH32P20T Datasheet (235.02 KB)